SIJH112E-T1-GE3
Vishay Siliconix
Product No:
SIJH112E-T1-GE3
Manufacturer:
Package:
PowerPAK® 8 x 8
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 100V 23A/225A PPAK
Quantity:
In Stock : 3
Minimum: 1 Multiples: 1
Qty
Unit Price
1
4.199
10
3.52925
100
2.85494
500
2.537678
1000
2.172897
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Product Information
Parameter Info
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIJH112 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 20A, 10V |
| Power Dissipation (Max) | 3.3W (Ta), 333W (Tc) |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8050 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 225A (Tc) |
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