SIRA18BDP-T1-GE3
Vishay Siliconix
Product No:
SIRA18BDP-T1-GE3
Manufacturer:
Package:
PowerPAK® SO-8
Batch:
-
Datasheet:
Description:
MOSFET N-CH 30V 19A/40A PPAK SO8
Quantity:
In Stock : 15646
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.4465
10
0.38285
100
0.26619
500
0.207822
1000
0.168929
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Product Information
Parameter Info
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Base Product Number | SIRA18 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 6.83mOhm @ 10A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 17W (Tc) |
| Supplier Device Package | PowerPAK® SO-8 |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 40A (Tc) |
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30,000,000Standard Product Unit
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