Toshiba Semiconductor and Storage
Product No:
SSM6N35FE,LM
Manufacturer:
Package:
ES6
Batch:
-
Datasheet:
-
Description:
MOSFET 2N-CH 20V 0.18A ES6
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.361
10
0.26885
100
0.152095
500
0.100738
1000
0.077235
2000
0.067165
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Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Technology | MOSFET (Metal Oxide) |
FET Feature | Logic Level Gate |
Power - Max | 150mW |
Configuration | 2 N-Channel (Dual) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Product Status | Active |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Base Product Number | SSM6N35 |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
Supplier Device Package | ES6 |
Gate Charge (Qg) (Max) @ Vgs | - |
Drain to Source Voltage (Vdss) | 20V |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
Current - Continuous Drain (Id) @ 25°C | 180mA |