TK10J80E,S1E

Toshiba Semiconductor and Storage

Product No:

TK10J80E,S1E

Manufacturer:

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 10A TO3P

Quantity:

In Stock : 15

Minimum: 1 Multiples: 1

Qty

Unit Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Parameter Info

Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVIII
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	TK10J80
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Power Dissipation (Max)	250W (Tc)
Supplier Device Package	TO-3P(N)
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Drain to Source Voltage (Vdss)	800 V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)