TP65H070G4PS
Transphorm
Product No:
TP65H070G4PS
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
GANFET N-CH 650V 29A TO220
Quantity:
In Stock : 1000
Minimum: 1 Multiples: 1
Qty
Unit Price
1
8.2175
10
7.04615
100
5.87214
500
5.1813
1000
4.66317
2000
4.369563
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Product Information
Parameter Info
| Mfr | Transphorm |
| Series | SuperGaN® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.7V @ 700µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18A, 10V |
| Power Dissipation (Max) | 96W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 638 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
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2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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