Home / FET, MOSFET Arrays / TSM110NB04LDCR RLG

TSM110NB04LDCR RLG

Taiwan Semiconductor Corporation

Product No:

TSM110NB04LDCR RLG

Package:

8-PDFN (5x6)

Batch:

-

Datasheet:

Description:

DUAL N-CHANNEL POWER MOSFET 40V,

Quantity:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.375

  • 10

    1.97315

  • 100

    1.57016

  • 500

    1.328594

  • 1000

    1.127298

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 2W (Ta), 48W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number TSM110
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V
Supplier Device Package 8-PDFN (5x6)
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 40V
Input Capacitance (Ciss) (Max) @ Vds 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 48A (Tc)