VS-3C10ET07T-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-3C10ET07T-M3

Manufacturer:

Package:

TO-220AC

Batch:

Datasheet:

Description:

650 V POWER SIC GEN 3 MERGED PIN

Quantity:

In Stock : 3047

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Vishay General Semiconductor - Diodes Division
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-220-2
Product Status	Active
Base Product Number	VS-3C10
Capacitance @ Vr, F	445pF @ 1V, 1MHz
Supplier Device Package	TO-220AC
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	55 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	10A
Operating Temperature - Junction	-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 10 A