18N20F
Goford Semiconductor
Product No:
18N20F
Manufacturer:
Package:
TO-220F
Batch:
-
Datasheet:
Description:
N200V, 18A,RD<0.19@10V,VTH1.0V~3
Quantity:
In Stock : 77
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.1115
10
0.9063
100
0.70528
500
0.597778
1000
0.486951
2000
0.458404
5000
0.436572
10000
0.416423
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Product Information
Parameter Info
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| Power Dissipation (Max) | 110W (Tc) |
| Supplier Device Package | TO-220F |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 836 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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