2SJ360(F)

Toshiba Semiconductor and Storage

Product No:

2SJ360(F)

Package:

PW-MINI

Batch:

-

Datasheet:

Description:

MOSFET P-CH 60V 1A PW-MINI

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Bulk
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-243AA
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 1mA
Base Product Number 2SJ360
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 730mOhm @ 500mA, 10V
Power Dissipation (Max) 500mW (Ta)
Supplier Device Package PW-MINI
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 155 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)