2SK2719(F)
Toshiba Semiconductor and Storage
Product No:
2SK2719(F)
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 900V 3A TO3P
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Base Product Number | 2SK2719 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1.5A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Supplier Device Package | TO-3P(N) |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 900 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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