2SK2967(F)

Toshiba Semiconductor and Storage

Product No:

2SK2967(F)

Package:

TO-3P(N)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 250V 30A TO3P

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tray
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Obsolete
Vgs(th) (Max) @ Id 3.5V @ 1mA
Base Product Number 2SK2967
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 68mOhm @ 15A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package TO-3P(N)
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V
Drain to Source Voltage (Vdss) 250 V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)