G10N10A
Goford Semiconductor
Product No:
G10N10A
Manufacturer:
Package:
TO-252
Batch:
-
Datasheet:
-
Description:
N100V,RD(MAX)130MOHM@10V,TO-252
Quantity:
In Stock : 4837
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.551
10
0.46645
100
0.32433
500
0.253213
1000
0.205808
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Product Information
Parameter Info
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2A, 10V |
| Power Dissipation (Max) | 28W (Ta) |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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