G7K2N20HE
Goford Semiconductor
Product No:
G7K2N20HE
Manufacturer:
Package:
SOT-223
Batch:
-
Datasheet:
-
Description:
N200V, ESD,2A,RD<0.7@10V,VTH1V~2
Quantity:
In Stock : 1265
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.4655
10
0.3629
100
0.217645
500
0.201495
1000
0.137018
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Product Information
Parameter Info
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 1A, 10V |
| Power Dissipation (Max) | 1.8W (Tc) |
| Supplier Device Package | SOT-223 |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 568 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
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