GC20N65Q
Goford Semiconductor
Product No:
GC20N65Q
Manufacturer:
Package:
TO-247
Batch:
-
Datasheet:
-
Description:
N650V,RD(MAX)<170M@10V,VTH2.5V~4
Quantity:
In Stock : 35
Minimum: 1 Multiples: 1
Qty
Unit Price
1
3.3535
10
2.8177
100
2.27981
500
2.026464
1000
1.735156
2000
1.633838
5000
1.5675
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Product Information
Parameter Info
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 10A, 10V |
| Power Dissipation (Max) | 151W (Tc) |
| Supplier Device Package | TO-247 |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1724 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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