GT100N12T
Goford Semiconductor
Product No:
GT100N12T
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Quantity:
In Stock : 198
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.4725
10
1.22265
100
0.972895
500
0.823251
1000
0.698516
2000
0.663594
5000
0.638647
10000
0.6175
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 35A, 10V |
| Power Dissipation (Max) | 120W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 120 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050 pF @ 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback