GT40QR21(STA1,E,D

Toshiba Semiconductor and Storage

Product No:

GT40QR21(STA1,E,D

Manufacturer:

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

DISCRETE IGBT TRANSISTOR TO-3PN(

Quantity:

In Stock : 18

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
IGBT Type	-
Input Type	Standard
Power - Max	230 W
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Test Condition	280V, 40A, 10Ohm, 20V
Switching Energy	-, 290µJ (off)
Base Product Number	GT40QR21
Td (on/off) @ 25°C	-
Operating Temperature	175°C (TJ)
Supplier Device Package	TO-3P(N)
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 40A
Reverse Recovery Time (trr)	600 ns
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Voltage - Collector Emitter Breakdown (Max)	1200 V