Toshiba Semiconductor and Storage
Product No:
SSM6J215FE(TE85L,F
Manufacturer:
Package:
ES6
Batch:
-
Datasheet:
-
Description:
MOSFET P CH 20V 3.4A ES6
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.418
10
0.36005
100
0.26866
500
0.21109
1000
0.163115
2000
0.148722
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Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSVI |
Package | Tape & Reel (TR) |
FET Type | P-Channel |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Product Status | Active |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Base Product Number | SSM6J215 |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 59mOhm @ 3A, 4.5V |
Power Dissipation (Max) | 500mW (Ta) |
Supplier Device Package | ES6 |
Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 4.5 V |
Drain to Source Voltage (Vdss) | 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 10 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |