SSM6J512NU,LF

Toshiba Semiconductor and Storage

Product No:

SSM6J512NU,LF

Package:

6-UDFNB (2x2)

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 12V 10A 6UDFNB

Quantity:

In Stock : 31045

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.437

  • 10

    0.35625

  • 100

    0.242535

  • 500

    0.181925

  • 1000

    0.136439

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series U-MOSVII
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±10V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Base Product Number SSM6J512
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 16.2mOhm @ 4A, 8V
Power Dissipation (Max) 1.25W (Ta)
Supplier Device Package 6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss) 12 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)