Toshiba Semiconductor and Storage
Product No:
SSM6J512NU,LF
Manufacturer:
Package:
6-UDFNB (2x2)
Batch:
-
Datasheet:
-
Description:
MOSFET P-CH 12V 10A 6UDFNB
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.437
10
0.35625
100
0.242535
500
0.181925
1000
0.136439
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Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSVII |
Package | Tape & Reel (TR) |
FET Type | P-Channel |
Vgs (Max) | ±10V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Base Product Number | SSM6J512 |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 16.2mOhm @ 4A, 8V |
Power Dissipation (Max) | 1.25W (Ta) |
Supplier Device Package | 6-UDFNB (2x2) |
Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 4.5 V |
Drain to Source Voltage (Vdss) | 12 V |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 6 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |