TK10E80W,S1X

Toshiba Semiconductor and Storage

Product No:

TK10E80W,S1X

Manufacturer:

Package:

TO-220

Batch:

Datasheet:

Description:

PB-F POWER MOSFET TRANSISTOR TO-

Quantity:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Parameter Info

Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 450µA
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	550mOhm @ 4.8A, 10V
Power Dissipation (Max)	130W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Drain to Source Voltage (Vdss)	800 V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9.5A (Ta)