TK10V60W,LVQ
Toshiba Semiconductor and Storage
Product No:
TK10V60W,LVQ
Manufacturer:
Package:
4-DFN-EP (8x8)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 600V 9.7A 4DFN
Quantity:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.7V @ 500µA |
| Base Product Number | TK10V60 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 4.9A, 10V |
| Power Dissipation (Max) | 88.3W (Tc) |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback