TK12V60W,LVQ

Toshiba Semiconductor and Storage

Product No:

TK12V60W,LVQ

Package:

4-DFN-EP (8x8)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 11.5A 4DFN

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 600µA
Base Product Number TK12V60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 300mOhm @ 5.8A, 10V
Power Dissipation (Max) 104W (Tc)
Supplier Device Package 4-DFN-EP (8x8)
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)