TK155A65Z,S4X

Toshiba Semiconductor and Storage

Product No:

TK155A65Z,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 18A TO220SIS

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series DTMOSVI
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 730µA
Base Product Number TK155A65
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 155mOhm @ 9A, 10V
Power Dissipation (Max) 40W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1635 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)