TK17E80W,S1X

Toshiba Semiconductor and Storage

Product No:

TK17E80W,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CHANNEL 800V 17A TO220

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 850µA
Base Product Number TK17E80
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 290mOhm @ 8.5A, 10V
Power Dissipation (Max) 180W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 17A (Ta)