TK17N65W,S1F

Toshiba Semiconductor and Storage

Product No:

TK17N65W,S1F

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 17.3A TO247

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 900µA
Base Product Number TK17N65
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 200mOhm @ 8.7A, 10V
Power Dissipation (Max) 165W (Tc)
Supplier Device Package TO-247
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)